Part Number Hot Search : 
M00000 PDAA5 1A102 ADD8704 2SC57 LAA110LS RTD34024 1991089
Product Description
Full Text Search
 

To Download 2N381102 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 2N3811
Silicon PNP Transistor
Data Sheet
Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3811J) * JANTX level (2N3811JX) * JANTXV level (2N3811JV) * JANS level (2N3811JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request
Applications
* General purpose * Matched Dual transistors * PNP silicon transistor
Features
* * * * Hermetically sealed TO-78 metal can Also available in chip configuration Chip geometry 0220 Reference document: MIL-PRF-19500/336
Benefits
Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Operating Junction Temperature Storage Temperature TJ TSTG Symbol VCEO VCBO VEBO IC PT * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available
TC = 25C unless otherwise specified
Rating 60 60 5 50 300 one section 600 both sections 1.71 one section 3.43 both sections -65 to +200 -65 to +200
Unit Volts Volts Volts mA mW mW/C C C
Copyright 2002 Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
www.SEMICOA.com
2N3811
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25C
Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE3-1/hFE3-2 Base-Emitter Voltage VBE |VBE1-VBE2|1 |VBE1-VBE2|2 |VBE1-VBE2|3 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 1 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 100 A, VCE = 5 Volts TA = -55C IC = 100 A, VCE = 5 Volts VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 10 A VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 10 mA IC = 100 A, IB = 10 A IC = 1 mA, IB = 100 A IC = 100 A, IB = 10 A IC = 1 mA, IB = 100 A Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 100 A VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150C VEB = 5 Volts VEB = 4 Volts Min 60 10 10 10 10 10 Typ Max Units Volts A nA A A nA
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
Min 75 225 300 300 250 100 0.9
Typ
Max
Units
DC Current Gain
900 900
1.0 0.7 5 3 5 0.7 0.8 0.20 0.25 Volts mVolts mVolts mVolts Volts Volts
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Copyright 2002 Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3811
Silicon PNP Transistor
Data Sheet Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Symbol |hFE1| |hFE2| hFE COBO CIBO Test Conditions VCE = 5 Volts, IC = 500 A, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 100 A, Rg = 3 k f = 100 Hz f = 1 kHz f = 10 kHz VCE = 10 Volts, IC = 100 A, Rg = 3 k 10 Hz < f < 15.7 kHz VCB =10V, IC =1mA, f =1kHz VCB =10V, IC =1mA, f =1kHz VCB =10V, IC=100A, f=1kHz Min 1 1 300 5 900 5 8 pF pF Typ Max Units
Noise Figure
NF1 NF2 NF3 NF hie hoe hre
4 1.5 2 2.5 3 5 40 60 25x10
-4
dB
Noise Figure (wideband) Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio
dB k
Copyright 2002 Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3
www.SEMICOA.com


▲Up To Search▲   

 
Price & Availability of 2N381102

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X